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| Ordering number : ENA1158 VEC2904 SANYO Semiconductors DATA SHEET VEC2904 Features * * PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET General-Purpose Switching Device Applications Composite type, facilitating high-density mounting. Mounting height 0.75mm. Specifications Absolute Maximum Ratings at Ta=25C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Collector Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [FET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% When mounted on ceramic substrate (900mm20.8mm) 1unit --12 8 --4 --16 1.1 150 --55 to +150 V V A A W C C VCBO VCEO VECO VEBO IC ICP IB PC Tj Tstg When mounted on ceramic substrate (900mm20.8mm) 1unit --30 --30 --6.5 --5 --3 --5 --600 1.1 150 --55 to +150 V V V V A A mA W C C Symbol Conditions Ratings Unit Marking : AH Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40908PE TI IM TC-00001144 No. A1158-1/6 VEC2904 Electrical Characteristics at Ta=25C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time [FET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=-1mA, VGS=0V VDS=-12V, VGS=0V VGS=6.4V, VDS=0V VDS=-6V, ID=--1mA VDS=-6V, ID=-2A ID=-2A, VGS=-4.5V ID=-1A, VGS=-2.5V ID=-0.3A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=-6V, VGS=-4.5V, ID=-4A VDS=-6V, VGS=-4.5V, ID=-4A VDS=-6V, VGS=-4.5V, ID=-4A IS=--4A, VGS=0V --12 --10 10 --0.3 4.5 7.6 37 54 76 940 230 180 14 120 97 110 11 1.6 2.8 -0.85 --1.2 49 75 107 --1.0 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V ICBO IEBO hFE fT Cob VCE(sat)1 VCE(sat)2 VBE(sat) V(BR)CBO V(BR)CEO V(BR)ECO V(BR)EBO ton tstg tf VCB=-30V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--500mA VCE=-10V, IC=--500mA VCB=-10V, f=1MHz IC=-1.5A, IB=--30mA IC=-1.5A, IB=--75mA IC=-1.5A, IB=--30mA IC=-10A, IE=0A IC=-1mA, RBE= IC=-10A, RCB= IE=--10A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 200 380 25 --160 --110 -0.83 --30 --30 --6.5 --5 50 270 25 --235 --160 --1.2 --0.1 --0.1 560 MHz pF mV mV V V V V V ns ns ns A A Symbol Conditions Ratings min typ max Unit Note : The specifications shown above are for each individual transistor. Package Dimensions unit : mm (typ) 7012-010 0.25 0.3 0.15 Electrical Connection 8 7 6 5 8 7 65 1 : Emitter 2 : Base 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Collector 8 : Collector Top view 2.8 2.3 0.25 1 2 2.9 3 0.65 4 1 2 3 4 0.75 1 : Emitter 2 : Base 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Collector 8 : Collector SANYO : VEC8 No. A1158-2/6 0.07 VEC2904 Switching Time Test Circuit [TR] [FET] VIN PW=20s D.C.1% INPUT RB VR 50 + 100F VBE=5V + 470F RL IB1 IB2 OUTPUT VDD= --6V 0V --4.5V VIN D ID= --2A RL=3 VOUT PW=10s D.C.1% G VEC2904 VCC= --12V P.G 50 S IC=20IB1=--20IB2=500mA --2.0 IC -- VCE mA [TR] --4.0 --3.5 IC -- VBE [TR] --40mA --1.6 --3 0 0 --2 mA --10mA VCE= --2V --8mA Collector Current, IC -- A Collector Current, IC -- A A --50m --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 --6mA --4mA --1.2 --0.8 --2mA --0.4 0 0 --200 --400 --600 IB=0mA --800 --1000 IT01743 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 IT01744 Collector-to-Emitter Voltage, VCE -- V 1000 7 5 Base-to-Emitter Voltage, VBE -- V --1.0 7 5 hFE -- IC [TR] VCE(sat) -- IC Ta=7 5 C 25C --25C [TR] VCE= --2V Ta=75C IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V DC Current Gain, hFE 3 2 3 2 --0.1 7 5 3 2 25C --25C 100 7 5 3 2 7 Ta= C --25 5C C 25 --0.01 7 5 3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 IT01746 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 IT01745 --0.001 --0.01 Collector Current, IC -- A No. A1158-3/6 VEC2904 --10 7 5 VCE(sat) -- IC [TR] --10 7 VBE(sat) -- IC [TR] IC / IB=50 IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 --1.0 7 5 3 2 Ta= --25C 75C 25C 5C Ta=7 C --25 2 3 5 7 --0.1 2 3 C 25 --0.01 --0.01 5 7 --1.0 2 3 Collector Current, IC -- A 2 5 7 --10 IT01747 --0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Cob -- VCB Collector Current, IC -- A 1000 7 5 7 --10 IT01748 [TR] f T -- IC f=1MHz [TR] VCE= --10V Gain-Bandwidth Product, f T -- MHz Output Capacitance, Cob -- pF 5 3 2 100 7 5 100 7 5 3 2 3 2 10 --1.0 2 3 5 7 --10 2 3 5 IT01749 10 --10 2 3 5 7 --100 2 3 5 7 --1000 2 3 Collector-to-Base Voltage, VCB -- V --10 7 5 3 ASO Collector Current, IC -- mA 1.4 IT01750 [TR] ICP= --5A 10 0 PC -- Ta [TR] When mounted on ceramic substrate (900mm20.8mm) 1unit Collector Current, IC -- A 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IC= --3A Collector Dissipation, PC -- W 5 1m 10 10m 0m s DC s op era tio n 1.2 1.1 1.0 s 50 s 0 s 0.8 0.6 0.4 --0.01 --0.1 Ta=25C Single pulse When mounted on ceramic substrate (900mm20.8mm) 1unit 2 3 5 7 --1.0 2 3 5 7 --10 2 3 0.2 0 0 20 40 60 80 100 120 140 160 IT13481 Collector-to-Emitter Voltage, VCE -- V Ambient Temperature, Ta -- C --4.0 IT13482 --6.0V --4.5V --4.0V --2.5 V --2.0 V --1. 8V --4 ID -- VDS [FET] ID -- VGS VDS= --6V [FET] --1.5V --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 Drain Current, ID -- A --2 Drain Current, ID -- A --3 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Ta= 7 VGS= --1.0V 25 C --25C --1.2 --1.4 5C --1.6 --1.8 Drain-to-Source Voltage, VDS -- V IT09403 Gate-to-Source Voltage, VGS -- V IT09404 No. A1158-4/6 VEC2904 150 RDS(on) -- VGS --1.0A [FET] 150 RDS(on) -- Ta [FET] Ta=25C Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 125 125 100 ID= --0.3A --2.0A 100 75 75 50 50 1.0A I = -2.5V, D = -VGS = --2.0A 4.5V, I D V GS= -- = -VGS .3 = --0 , ID 1.8V A 25 25 0 0 --1 --2 --3 --4 --5 --6 IT09405 0 --60 --40 --20 0 20 40 60 80 100 120 140 160 Gate-to-Source Voltage, VGS -- V 10 Ambient Temperature, Ta -- C --10 7 5 3 2 --1.0 7 5 IT09406 yfs -- ID [FET] IS -- VSD [FET] Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS= --6V VGS=0V = Ta Source Current, IS -- A 1.0 7 5 3 2 --0.1 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 3 5 7 --10 IT09407 --0.01 --0.3 --0.4 --0.5 Ta= 7 C 25 3 2 --0.6 --0.7 --25 C --0.8 --0.9 25 C C 5 --2 C 75 5C --1.0 --1.1 SW Time -- ID [FET] 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V IT09408 VDD= --6V VGS= --4.5V [FET] f=1MHz Switching Time, SW Time -- ns 2 td (off) 100 7 5 3 2 Ciss, Coss, Crss -- pF 1000 7 5 Ciss tf tr 3 2 td(on) Coss Crss 10 7 --0.1 100 2 3 5 7 --1.0 2 3 5 7 0 --2 --4 --6 --8 --10 --12 IT09410 Drain Current, ID -- A --4.5 --4.0 --3.5 IT09409 Drain-to-Source Voltage, VDS -- V 3 2 --10 7 5 VGS -- Qg [FET] ASO IDP= --16A ID= --4A [FET] Gate-to-Source Voltage, VGS -- V VDS= --6V ID= --4A Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 DC 10 10 PW10s 1m s s op era tio n 0m ms Operation in this area is limited by RDS(on). Ta=25C Single pulse When mounted on ceramic substrate (900mm20.8mm) 1unit 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 --0.01 --0.01 Total Gate Charge, Qg -- nC IT09411 Drain-to-Source Voltage, VDS -- V IT13483 No. A1158-5/6 VEC2904 1.2 1.1 PD -- Ta [FET] When mounted on ceramic substrate (900mm20.8mm) 1unit Collector Dissipation, PD -- W 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT13484 Note on usage : Since the VEC2904 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2008. Specifications and information herein are subject to change without notice. PS No. A1158-6/6 |
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